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This 16GB (2x 8GB) DDR3L 1866 MT/s Dual rank
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL7 Configuration 512M x8 Pieces in Kit 2 Compatibility
5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM CAS Latency CL11 Pieces in Kit 1 Compatibility
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 2GB (1x 2GB) DDR 333 MT/s 184-pin RDIMM RAM module from Samsung
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR4 2133 MT/s 288-pin RDIMM RAM kit from Crucial
Samsung 512MB (2x 256MB) CL2.5 DDR-266 PC2100 2.5V SR x8 184-pin UDIMM RAM Kit System Type_Workstation This 16GB (2x 8GB) DDR3LProduct Overview This 512MB (2x 256MB) DDR 266 MT s Single rank, x8 configuration RAM kit from Samsung is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM kit also operates at a standard voltage of 2. 5V with a CAS Latency of CL2. 5, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical
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