Samsung 64GB (1x 64GB) DDR4-2133 PC4-17000 1.2V QR x4 ECC Load Reduced 288-pin LRDIMM RAM Module Model_iMAC_19_1 5V Technology DDR Error Correction

5V Technology DDR Error Correction Non-ECC Signal Processing Unbuffered Form Factor 184-pin UDIMM CAS Latency CL2

HMT451U6BFR8C-PB Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration 18-chip 256M x8 Pieces in Kit 1 Compatibility

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Configuration 1024M x8 Pieces in Kit 2 Compatibility

RM2911 Capacity 16GB (2x 8GB) Brand Ramcity using Micron chips Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1

Samsung 64GB (1x 64GB) DDR4-2133 PC4-17000 1.2V QR x4 ECC Load Reduced 288-pin LRDIMM RAM Module Model_iMAC_19_1 5V Technology DDR Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 64GB (1x 64GB) DDR4 2133 MT s 288 pin LRDIMM RAM module from Samsung . This Quad rank, x4 configuration RAM module is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM module also operates at a standard voltage of 1. 2V and is